IPS65R1K4C6AKMA1
IPS65R1K4C6AKMA1
Part Number IPS65R1K4C6AKMA1 Description MOSFET N-CH 650V 3.2A TO-251 Package / Case TO-251-3 Stub Leads, IPakUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 3.2A (Tc) 28W (Tc) Through Hole PG-TO251-3
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IPS65R1K4C6AKMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPS65R1K4C6 Standard Package 1500 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Tube Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V FET Feature - Power Dissipation (Max) 28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Stub Leads, IPak
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