IPW60R190P6FKSA1

Part NumberIPW60R190P6FKSA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPW60R190P6
Standard Package	240
Manufacturer	Infineon Technologies
Series	CoolMOS™ P6
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id	4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 100V
FET Feature	-
Power Dissipation (Max)	151W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3

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