IPZ40N04S55R4ATMA1
IPZ40N04S55R4ATMA1
Part Number IPZ40N04S55R4ATMA1
Description MOSFET N-CH 8TDSON
Package / Case 8-PowerVDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 40V 40A (Tc) 48W (Tc) Surface Mount PG-TSDSON-8
To learn about the specification of IPZ40N04S55R4ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPZ40N04S55R4ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPZ40N04S55R4ATMA1.
We are offering IPZ40N04S55R4ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPZ40N04S55R4ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPZ40N04S5-5R4
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerVDFN
IPZ40N04S55R4ATMA1 - Related ProductsMore >>
IRF7739L1TRPBF
Infineon Technologies, N-Channel 40V 46A (Ta), 270A (Tc) 3.8W (Ta), 125W (Tc) Surface Mount DIRECTFET L8,
View
IRF7473TRPBF
Infineon Technologies, N-Channel 100V 6.9A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IPD80R450P7ATMA1
Infineon Technologies, N-Channel 800V 11A (Tc) 73W (Tc) Surface Mount TO-252, CoolMOS™
View
IXTP50N25T
IXYS, N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-220AB,
View
APT28M120B2
Microsemi Corporation, N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2], POWER MOS 8™
View
R6020JNZ4C13
Rohm Semiconductor, N-Channel 600V 20A (Tc) 252W (Tc) Through Hole TO-247G,
View
IPD50R280CEAUMA1
Infineon Technologies, N-Channel 550V 18.1A (Tc) 119W (Tc) Surface Mount PG-TO252, CoolMOS™
View
TPH1400ANH,L1Q
Toshiba Semiconductor and Storage, N-Channel 100V 24A (Tc) 1.6W (Ta), 48W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H
View
IRFS4410TRLPBF
Infineon Technologies, N-Channel 100V 88A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®
View
SI4062DY-T1-GE3
Vishay Siliconix, N-Channel 60V 32.1A (Tc) 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
View
IPA70R360P7SXKSA1
Infineon Technologies, N-Channel 700V 12.5A (Tc) 26.4W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
View
SIR882ADP-T1-GE3
Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPZ40N04S55R4ATMA1 - Tags