IPZ60R099C7XKSA1
IPZ60R099C7XKSA1
Part Number IPZ60R099C7XKSA1
Description MOSFET N-CH 600V 22A TO247-4
Package / Case TO-247-4
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 22A (Tc) 110W (Tc) Through Hole PG-TO247-4
To learn about the specification of IPZ60R099C7XKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPZ60R099C7XKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPZ60R099C7XKSA1.
We are offering IPZ60R099C7XKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPZ60R099C7XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPZ60R099C7
Standard Package 240
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1819pF @ 400V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-4
Package / Case TO-247-4
IPZ60R099C7XKSA1 - Related ProductsMore >>
TK10P60W,RVQ
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV
View
APT17F120J
Microsemi Corporation, N-Channel 1200V 18A (Tc) 545W (Tc) Chassis Mount ISOTOP®, POWER MOS 8™
View
NTLJF4156NT1G
ON Semiconductor, N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2),
View
IXFN55N50F
IXYS-RF, N-Channel 500V 55A (Tc) 600W (Tc) Chassis Mount SOT-227B, HiPerRF™
View
TSM60NB190CM2 RNG
Taiwan Semiconductor Corporation, N-Channel 600V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D²Pak),
View
PSMN2R0-30YL,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 97W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™
View
IPD50N10S3L16ATMA1
Infineon Technologies, N-Channel 100V 50A (Tc) 100W (Tc) Surface Mount PG-TO252-3, OptiMOS™
View
FDS3512
ON Semiconductor, N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
IPB65R310CFDATMA1
Infineon Technologies, N-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
View
IPB020N08N5ATMA1
Infineon Technologies, N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
STW40N65M2
STMicroelectronics, N-Channel 650V 32A (Tc) 250W (Tc) Through Hole TO-247, MDmesh™ M2
View
IRFL4310TRPBF
Infineon Technologies, N-Channel 100V 1.6A (Ta) 1W (Ta) Surface Mount SOT-223, HEXFET®
View
IPZ60R099C7XKSA1 - Tags