IRF5802TRPBF

Part NumberIRF5802TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF5802PBF
Standard Package	3000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	88pF @ 25V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro6™(TSOP-6)
Package / Case	SOT-23-6 Thin, TSOT-23-6

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