IRFB3306GPBF

Part NumberIRFB3306GPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFB3306GPbF
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4520pF @ 50V
FET Feature	-
Power Dissipation (Max)	230W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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