IRFD110PBF
IRFD110PBF
Part Number IRFD110PBF Description MOSFET N-CH 100V 1A 4-DIP Package / Case 4-DIP (0.300", 7.62mm)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
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IRFD110PBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFD110 Standard Package 100 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V FET Feature - Power Dissipation (Max) 1.3W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package 4-DIP, Hexdip, HVMDIP Package / Case 4-DIP (0.300", 7.62mm)
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