IRFH6200TRPBF

Part NumberIRFH6200TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFH6200PBF
Standard Package	4000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	0.95mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	1.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	230nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	10890pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerVDFN

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FDMS7678	ON Semiconductor, N-Channel 30V 17.5A (Ta), 26A (Tc) 2.3W (Ta), 41W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
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CSD19537Q3	Texas Instruments, N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3), NexFET™	View

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