IRFHM830TR2PBF

Part NumberIRFHM830TR2PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 30V 21A PQFN

DatasheetIRFHM830PbF

Package / Case8-VQFN Exposed Pad

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3)

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IRFHM830TR2PBF - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFHM830PbF

Standard Package

Manufacturer

Infineon Technologies

Series

HEXFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

31nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 25V

FET Feature

Power Dissipation (Max)

2.7W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PQFN (3x3)

Package / Case

8-VQFN Exposed Pad

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