IRFHM8337TRPBF
IRFHM8337TRPBF
Part Number IRFHM8337TRPBF Description MOSFET N-CH 30V 12A 8PQFN Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 12A (Ta) 2.8W (Ta), 25W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
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IRFHM8337TRPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFHM8337(TR)PBF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.4mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 755pF @ 15V FET Feature - Power Dissipation (Max) 2.8W (Ta), 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-PQFN (3.3x3.3), Power33 Package / Case 8-PowerTDFN
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