IRFHS8342TRPBF
IRFHS8342TRPBF
Part Number IRFHS8342TRPBF Description MOSFET N-CH 30V 8.8A PQFN Package / Case 6-PowerVDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount PG-TSDSON-6
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IRFHS8342TRPBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFHS8342PBF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-6 Package / Case 6-PowerVDFN
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