IRFP4668PBF
IRFP4668PBF
Part Number IRFP4668PBF Description MOSFET N-CH 200V 130A TO-247AC Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247AC
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IRFP4668PBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFP4668PBF Standard Package 25 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.7mOhm @ 81A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 241nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V FET Feature - Power Dissipation (Max) 520W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3
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