IRFP7530PBF
IRFP7530PBF
Part Number IRFP7530PBF Description MOSFET N CH 60V 195A TO247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 195A (Tc) 341W (Tc) Through Hole TO-247
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IRFP7530PBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFP7530PbF Standard Package 400 Manufacturer Infineon Technologies Series HEXFET®, StrongIRFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V FET Feature - Power Dissipation (Max) 341W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3
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