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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_024
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
R6020KNZC8
Rohm Semiconductor, N-Channel 600V 20A (Tc) 68W (Tc) Through Hole TO-3PF,
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SQR40030ER_GE3
Vishay Siliconix, Surface Mount TO-252 (DPAK),
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SQD50N04-5M6L_GE3
Vishay Siliconix, N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®
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PSMN5R5-60YS,115
Nexperia USA Inc., N-Channel 60V 100A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,
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STW26NM60N
STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Through Hole TO-247-3, MDmesh™ II
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CSD17573Q5BT
Texas Instruments, N-Channel 30V 100A (Ta) 3.2W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™
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IPP041N12N3GXKSA1
Infineon Technologies, N-Channel 120V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3, OptiMOS™
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STL31N65M5
STMicroelectronics, N-Channel 650V 2.8A (Ta), 15A (Tc) 2.8W (Ta), 125W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ V
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SI2302DDS-T1-GE3
Vishay Siliconix, N-Channel 20V 2.9A (Tj) 710mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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SI3440ADV-T1-GE3
Vishay Siliconix, N-Channel 150V 2.2A (Tc) 3.6W (Tc) Surface Mount 6-TSOP, TrenchFET®
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CSD13302W
Texas Instruments, N-Channel 12V 1.6A (Ta) 1.8W (Ta) Surface Mount 4-DSBGA, NexFET™
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IPD60R380P6ATMA1
Infineon Technologies, N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P6
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