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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_024 Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
DMN3009SFG-7 Diodes Incorporated, N-Channel 30V 16A (Ta), 45A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8,
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SUD23N06-31L-T4-E3 Vishay Siliconix, N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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VN0106N3-G Microchip Technology, N-Channel 60V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,
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IRLR110TRPBF Vishay Siliconix, N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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SIR690DP-T1-GE3 Vishay Siliconix, N-Channel 200V 34.4A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8, ThunderFET®
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IRF5802TRPBF Infineon Technologies, N-Channel 150V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
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SSM3K337R,LF Toshiba Semiconductor and Storage, N-Channel 38V 2A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSIV
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2SK536-TB-E ON Semiconductor, N-Channel 50V 100mA (Ta) 200mW (Ta) Surface Mount SC-59,
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TN5325K1-G Microchip Technology, N-Channel 250V 150mA (Ta) 360mW (Ta) Surface Mount TO-236AB (SOT23),
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STP5NK50ZFP STMicroelectronics, N-Channel 500V 4.4A (Tc) 70W (Tc) Through Hole TO-220FP, SuperMESH™
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SIHP120N60E-GE3 Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Through Hole TO-220AB,
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BSS123W-7-F Diodes Incorporated, N-Channel 100V 170mA (Ta) 200mW (Ta) Surface Mount SOT-323,
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