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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_024
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 640pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PMF370XN,115
Nexperia USA Inc., N-Channel 30V 870mA (Tc) 560mW (Tc) Surface Mount SC-70, TrenchMOS™
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IXFN320N17T2
IXYS, N-Channel 170V 260A (Tc) 1070W (Tc) Chassis Mount SOT-227B, GigaMOS™
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ZVN4525GTA
Diodes Incorporated, N-Channel 250V 310mA (Ta) 2W (Ta) Surface Mount SOT-223,
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BSC093N15NS5ATMA1
Infineon Technologies, N-Channel 150V 87A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™
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2N7002KW
ON Semiconductor, N-Channel 60V 310mA (Ta) 350mW (Ta) Surface Mount SC-70 (SOT323),
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IRFPC50PBF
Vishay Siliconix, N-Channel 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3,
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SIB406EDK-T1-GE3
Vishay Siliconix, N-Channel 20V 6A (Tc) 1.95W (Ta), 10W (Tc) Surface Mount PowerPAK® SC-75-6L Single, TrenchFET®
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IXFT26N100XHV
IXYS, N-Channel 1000V 26A (Ta) 860mW (Ta) Surface Mount TO-268HV (IXFT), HiPerFET™
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TK560P65Y,RQ
Toshiba Semiconductor and Storage, N-Channel 650V 7A (Tc) 60W (Tc) Surface Mount DPAK, DTMOSV
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NTMFS4985NFT1G
ON Semiconductor, N-Channel 30V 17.5A (Ta), 65A (Tc) 1.63W (Ta), 22.73W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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STH315N10F7-2
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
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SQS460EN-T1_GE3
Vishay Siliconix, N-Channel 60V 8A (Tc) 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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