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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_214
Standard Package 3000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
2N7002P,235
Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB,
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IRFR220TRLPBF
Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
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DMN2990UFA-7B
Diodes Incorporated, N-Channel 20V 510mA (Ta) 400mW (Ta) Surface Mount 3-X2-DFN0806,
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SI7108DN-T1-GE3
Vishay Siliconix, N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
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STF15N60M2-EP
STMicroelectronics, N-Channel 600V 11A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M2-EP
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SIHG25N60EFL-GE3
Vishay Siliconix, N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC,
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FCD620N60ZF
ON Semiconductor, N-Channel 600V 7.3A (Tc) 89W (Tc) Surface Mount DPAK, HiPerFET™, Polar™
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STL26N60DM6
STMicroelectronics, N-Channel 600V 15A (Tc) 110W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM6
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FDMC86183
ON Semiconductor, N-Channel 100V 47A (Tc) 52W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33,
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IPZ60R099C7XKSA1
Infineon Technologies, N-Channel 600V 22A (Tc) 110W (Tc) Through Hole PG-TO247-4, CoolMOS™ C7
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STB18N60M6
STMicroelectronics, N-Channel 600V 13A (Tc) 110W (Tc) Surface Mount D2PAK, MDmesh™ M6
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FQD1N60CTM
ON Semiconductor, N-Channel 600V 1A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®
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