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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_214
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPN70R360P7SATMA1
Infineon Technologies, N-Channel 700V 12.5A (Tc) 7.2W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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PMV213SN,215
Nexperia USA Inc., N-Channel 100V 1.9A (Tc) 280mW (Tj) Surface Mount TO-236AB, TrenchMOS™
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STQ1NK60ZR-AP
STMicroelectronics, N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™
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DMTH4007LPS-13
Diodes Incorporated, N-Channel 40V 15.5A (Ta), 100A (Tc) 2.7W (Ta), 150W (Tc) Surface Mount PowerDI5060-8,
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2N7002P,235
Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB,
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SUP57N20-33-E3
Vishay Siliconix, N-Channel 200V 57A (Tc) 3.75W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®
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IRF7601TRPBF
Infineon Technologies, N-Channel 20V 5.7A (Ta) 1.8W (Ta) Surface Mount Micro8™, HEXFET®
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SUD23N06-31L-T4-E3
Vishay Siliconix, N-Channel 60V 3W (Ta), 100W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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ZXMN6A07FQTA
Diodes Incorporated, N-Channel 60V 1.2A (Ta) 625mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101
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IXFX64N60Q3
IXYS, N-Channel 600V 64A (Tc) 1250W (Tc) Through Hole PLUS247™-3, HiPerFET™
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BSS316NH6327XTSA1
Infineon Technologies, N-Channel 30V 1.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
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FCPF099N65S3
ON Semiconductor, N-Channel 650V 30A (Tc) 43W (Tc) Through Hole TO-220F, SuperFET® III
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