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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
TK10P60W,RVQ
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV
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IRF614SPBF
Vishay Siliconix, N-Channel 250V 2.7A (Tc) 3.1W (Ta), 36W (Tc) Surface Mount D2PAK,
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IPD70R900P7SAUMA1
Infineon Technologies, N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
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SQM85N15-19_GE3
Vishay Siliconix, N-Channel 150V 85A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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IRFL4315TRPBF
Infineon Technologies, N-Channel 150V 2.6A (Ta) 2.8W (Ta) Surface Mount SOT-223, HEXFET®
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PSMN1R8-30PL,127
Nexperia USA Inc., N-Channel 30V 100A (Tc) 270W (Tc) Through Hole TO-220AB,
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IPZA60R060P7XKSA1
Infineon Technologies, N-Channel 600V 48A (Tc) 164W (Tc) Through Hole PG-TO247-4, CoolMOS™ P7
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FDMS8018
ON Semiconductor, N-Channel 30V 30A (Ta), 120A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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IXFH40N85X
IXYS, N-Channel 850V 40A (Tc) 860W (Tc) Through Hole TO-247, HiPerFET™
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PHB32N06LT,118
Nexperia USA Inc., N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK, TrenchMOS™
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BUK9214-30A,118
Nexperia USA Inc., N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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FDP22N50N
ON Semiconductor, N-Channel 500V 22A (Tc) 312.5W (Tc) Through Hole TO-220-3, UniFET™
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