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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
VN4012L-G
Microchip Technology, N-Channel 400V 160mA (Tj) 1W (Tc) Through Hole TO-92-3,
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PMV90ENER
Nexperia USA Inc., N-Channel 30V 3A (Ta) 460mW (Ta) Surface Mount TO-236AB,
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2N7002K-T1-E3
Vishay Siliconix, N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
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BSC014N06NSATMA1
Infineon Technologies, N-Channel 60V 30A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-17, OptiMOS™
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TSM090N03ECP ROG
Taiwan Semiconductor Corporation, N-Channel 30V 50A (Tc) 40W (Tc) Surface Mount TO-252, (D-Pak),
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RD3S075CNTL1
Rohm Semiconductor, N-Channel 190V 7.5A (Tc) 52W (Tc) Surface Mount TO-252,
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FDME410NZT
ON Semiconductor, N-Channel 20V 7A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®
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IRFB9N60APBF
Vishay Siliconix, N-Channel 600V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB,
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IPB60R060C7ATMA1
Infineon Technologies, N-Channel 650V 35A (Tc) 162W (Tc) Surface Mount PG-TO263-3, CoolMOS™ C7
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IPN70R1K5CEATMA1
Infineon Technologies, N-Channel 700V 5.4A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™
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PSMN2R9-30MLC,115
Nexperia USA Inc., N-Channel 30V 70A (Tc) 91W (Tc) Surface Mount LFPAK33,
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SUM45N25-58-E3
Vishay Siliconix, N-Channel 250V 45A (Tc) 3.75W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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