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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220 Standard Package 1 Manufacturer Vishay Siliconix Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 42W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FQD18N20V2TM ON Semiconductor, N-Channel 200V 15A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount D-Pak, QFET®
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2SK3541T2L Rohm Semiconductor, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VMT3,
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CDM2206-800LR SL Central Semiconductor Corp, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220,
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STN1HNK60 STMicroelectronics, N-Channel 600V 400mA (Tc) 3.3W (Tc) Surface Mount SOT-223, SuperMESH™
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STP4N90K5 STMicroelectronics, N-Channel 900V 3A (Tc) 60W (Tc) Through Hole TO-220, MDmesh™ K5
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SIR606DP-T1-GE3 Vishay Siliconix, N-Channel 100V 37A (Tc) 44.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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FDD2670 ON Semiconductor, N-Channel 200V 3.6A (Ta) 3.2W (Ta), 70W (Tc) Surface Mount TO-252, PowerTrench®
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TSM70N380CP ROG Taiwan Semiconductor Corporation, N-Channel 700V 11A (Tc) 125W (Tc) Surface Mount TO-252, (D-Pak),
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TK6R7P06PL,RQ Toshiba Semiconductor and Storage, N-Channel 60V 46A (Tc) 66W (Tc) Surface Mount DPAK, U-MOSIX-H
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TSM60N06CP ROG Taiwan Semiconductor Corporation, N-Channel 60V 66A (Tc) 44.6W (Tc) Surface Mount TO-252, (D-Pak),
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WPH4003-1E ON Semiconductor, N-Channel 1700V 2.5A (Tc) 3W (Ta), 55W (Tc) Through Hole TO-3PF,
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STL140N4LLF5 STMicroelectronics, N-Channel 40V 140A (Tc) 80W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ V
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