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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
PSMN1R6-30PL,127
Nexperia USA Inc., N-Channel 30V 100A (Tc) 306W (Tc) Through Hole TO-220AB,
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STD6N95K5
STMicroelectronics, N-Channel 950V 9A (Tc) 90W (Tc) Surface Mount DPAK, SuperMESH5™
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RCD041N25TL
Rohm Semiconductor, N-Channel 250V 4A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3,
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IRFR014PBF
Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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STD18NF25
STMicroelectronics, N-Channel 250V 17A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™ II
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STP110N8F6
STMicroelectronics, N-Channel 80V 110A (Tc) 200W (Tc) Through Hole TO-220, STripFET™ F6
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PSMN1R5-40PS,127
Nexperia USA Inc., N-Channel 40V 120A (Tc) 338W (Tc) Through Hole TO-220AB,
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BUK9628-55A,118
Nexperia USA Inc., N-Channel 55V 42A (Tc) 99W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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PSMN4R4-30MLC,115
Nexperia USA Inc., N-Channel 30V 70A (Tc) 69W (Tc) Surface Mount LFPAK33,
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SIHG44N65EF-GE3
Vishay Siliconix, N-Channel 650V 46A (Tc) 417W (Tc) Through Hole TO-247AC,
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IRF6715MTRPBF
Infineon Technologies, N-Channel 25V 34A (Ta), 180A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX, HEXFET®
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RF6E045AJTCR
Rohm Semiconductor, N-Channel 30V 4.5A (Ta) 1W (Tc) Surface Mount TUMT6,
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