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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 2000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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IXYS, N-Channel 600V 30A (Tc) 500W (Tc) Through Hole TO-3P, HiPerFET™
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BSC039N06NSATMA1
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FDS6680AS
ON Semiconductor, N-Channel 30V 11.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®, SyncFET™
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IPN80R1K2P7ATMA1
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NVMFS5C426NAFT1G
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FDS8449-F085
ON Semiconductor, N-Channel 40V 7.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, Automotive, AEC-Q101, PowerTrench®
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SUP85N15-21-E3
Vishay Siliconix, N-Channel 150V 85A (Tc) 2.4W (Ta), 300W (Tc) Through Hole TO-220AB, TrenchFET®
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ZVN3306FTA
Diodes Incorporated, N-Channel 60V 150mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,
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IPD30N03S2L20ATMA1
Infineon Technologies, N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3-11, OptiMOS™
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TSM4NB60CH C5G
Taiwan Semiconductor Corporation, N-Channel 600V 4A 50W (Tc) Through Hole TO-251 (IPAK),
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