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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 2000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR2905ZTRPBF
Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®
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STR2N2VH5
STMicroelectronics, N-Channel 20V 350mW (Tc) Surface Mount SOT-23, STripFET™ V
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FQB8N60CTM
ON Semiconductor, N-Channel 600V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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FDD8882
ON Semiconductor, N-Channel 30V 12.6A (Ta), 55A (Tc) 55W (Tc) Surface Mount TO-252AA, PowerTrench®
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STH315N10F7-6
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
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BS170-D26Z
ON Semiconductor, N-Channel 60V 500mA (Ta) 830mW (Ta) Through Hole TO-92-3,
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IPB160N04S4H1ATMA1
Infineon Technologies, N-Channel 40V 160A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3, OptiMOS™
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STH6N95K5-2
STMicroelectronics, N-Channel 950V 6A (Tc) 110W (Tc) Surface Mount H2Pak-2, MDmesh™ K5
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IRFP450LCPBF
Vishay Siliconix, N-Channel 500V 14A (Tc) 190W (Tc) Through Hole TO-247-3,
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SIHA25N60EFL-E3
Vishay Siliconix, N-Channel 600V 25A (Tc) 39W (Tc) Through Hole TO-220 Full Pack,
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ZXMN7A11GTA
Diodes Incorporated, N-Channel 70V 2.7A (Ta) 2W (Ta) Surface Mount SOT-223,
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APT10021JLL
Microsemi Corporation, N-Channel 1000V 37A (Tc) 694W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®
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