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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_310
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SIHG35N60EF-GE3
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AON6512
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TSM2N100CH C5G
Taiwan Semiconductor Corporation, N-Channel 1000V 1.85A (Tc) 77W (Tc) Through Hole TO-251 (IPAK),
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IRFB4310PBF
Infineon Technologies, N-Channel 100V 130A (Tc) 300W (Tc) Through Hole TO-220AB, HEXFET®
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STP120N4F6
STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Through Hole TO-220AB, Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
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ON Semiconductor, N-Channel 60V 32A (Tc) 79W (Tc) Through Hole TO-220-3, QFET®
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IRF830ASTRLPBF
Vishay Siliconix, N-Channel 500V 5A (Tc) 74W (Tc) Surface Mount,
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STW65N80K5
STMicroelectronics, N-Channel 800V 46A (Tc) 446W (Tc) Through Hole TO-247, MDmesh™ K5
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