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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_320
Standard Package 2000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STD4NK80ZT4
STMicroelectronics, N-Channel 800V 3A (Tc) 80W (Tc) Surface Mount DPAK, SuperMESH™
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SQ2398ES-T1_GE3
Vishay Siliconix, N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101, TrenchFET®
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NTP5864NG
ON Semiconductor, N-Channel 60V 63A (Tc) 107W (Tc) Through Hole TO-220AB,
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SSM3K336R,LF
Toshiba Semiconductor and Storage, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H
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STB20N95K5
STMicroelectronics, N-Channel 950V 17.5A (Tc) 250W (Tc) Surface Mount D2PAK, SuperMESH5™
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TK10A80E,S4X
Toshiba Semiconductor and Storage, N-Channel 800V 10A (Ta) 50W (Tc) Through Hole TO-220SIS, π-MOSVIII
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CSD17301Q5A
Texas Instruments, N-Channel 30V 28A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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DMN2050L-7
Diodes Incorporated, N-Channel 20V 5.9A (Ta) 1.4W (Ta) Surface Mount SOT-23-3,
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SUP60030E-GE3
Vishay Siliconix, N-Channel 80V 120A (Tc) 375W (Tc) Through Hole TO-220AB, TrenchFET®
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BUK7210-55B,118
Nexperia USA Inc., N-Channel 55V 75A (Tc) 167W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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IPB017N06N3GATMA1
Infineon Technologies, N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7, OptiMOS™
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STP12N60M2
STMicroelectronics, N-Channel 600V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ M2
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