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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR3710ZPbF, IRFU3710ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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ON Semiconductor, N-Channel 40V 26A (Tc) 20W (Tc) Surface Mount 8-WDFN (3.3x3.3),
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Rohm Semiconductor, N-Channel 200V 5A (Tc) 29W (Tc) Surface Mount TO-252,
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ON Semiconductor, N-Channel 400V 10.5A (Tc) 44W (Tc) Through Hole TO-220F, QFET®
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Toshiba Semiconductor and Storage, N-Channel 600V 11A (Ta) 45W (Tc) Through Hole TO-220SIS, U-MOSIX
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Infineon Technologies, N-Channel 650V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3, CoolMOS™
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Infineon Technologies, N-Channel 55V 22A (Tc) 37W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®
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Nexperia USA Inc., N-Channel 30V 3A (Ta) 460mW (Ta), 4.5W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101
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