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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR4105ZPbF, IRFU4105ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24.5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 740pF @ 25V
FET Feature -
Power Dissipation (Max) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SPP08N80C3XKSA1
Infineon Technologies, N-Channel 800V 8A (Tc) 104W (Tc) Through Hole PG-TO220-3, CoolMOS™
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MCU80N06-TP
Micro Commercial Co, N-Channel 60V 80A (Tc) 85W Surface Mount D-Pak,
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RU1C002UNTCL
Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount UMT3F,
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SI7456DDP-T1-GE3
Vishay Siliconix, N-Channel 100V 27.8A (Tc) 5W (Ta), 35.7W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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TSM60NB1R4CH C5G
Taiwan Semiconductor Corporation, N-Channel 600V 3A (Tc) 28.4W (Tc) Through Hole TO-251 (IPAK),
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BUK768R1-100E,118
Nexperia USA Inc., N-Channel 100V 100A (Tc) 263W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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FDMS86101A
ON Semiconductor, N-Channel 100V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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IRFZ44VZPBF
Infineon Technologies, N-Channel 60V 57A (Tc) 92W (Tc) Through Hole TO-220AB, HEXFET®
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IRF740SPBF
Vishay Siliconix, N-Channel 400V 10A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,
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IRF840LCPBF
Vishay Siliconix, N-Channel 500V 8A (Tc) 125W (Tc) Through Hole TO-220AB,
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IPD60R360P7ATMA1
Infineon Technologies, N-Channel 650V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
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DMT10H010LSS-13
Diodes Incorporated, N-Channel 100V 11.5A (Ta), 29.5A (Tc) 1.4W (Ta) Surface Mount 8-SO,
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