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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR9024NPbF, IRFU9024NPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI4431BDY-T1-E3
Vishay Siliconix, P-Channel 30V 5.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
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RW1A030APT2CR
Rohm Semiconductor, P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
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SUD50P04-08-GE3
Vishay Siliconix, P-Channel 40V 50A (Tc) 2.5W (Ta), 73.5W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®
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SQ2303ES-T1_GE3
Vishay Siliconix, P-Channel 30V 2.5A (Tc) 1.9W (Tc) Surface Mount TO-236 (SOT-23), Automotive, AEC-Q101, TrenchFET®
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DMP1022UFDF-7
Diodes Incorporated, P-Channel 12V 9.5A (Ta) 730mW (Ta) Surface Mount U-DFN2020-6 (Type F),
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TPC6111(TE85L,F,M)
Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8), U-MOSV
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STD52P3LLH6
STMicroelectronics, P-Channel 30V 52A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ H6
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BSS84AK,215
Nexperia USA Inc., P-Channel 50V 180mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™
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SI4463BDY-T1-GE3
Vishay Siliconix, P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®
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DMP1045U-7
Diodes Incorporated, P-Channel 12V 4A (Ta) 800mW (Ta) Surface Mount SOT-23,
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RU1C001ZPTL
Rohm Semiconductor, P-Channel 20V 100mA (Ta) 150mW (Ta) Surface Mount UMT3F,
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ZXMP4A57E6TA
Diodes Incorporated, P-Channel 40V 2.9A (Ta) 1.1W (Ta) Surface Mount SOT-26,
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