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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB23N20DPbF, IRFS(L)23N20DPbF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 24A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 100mOhm @ 14A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 170W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FQP50N06L ON Semiconductor, N-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO-220-3, QFET®
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FCH023N65S3L4 ON Semiconductor, N-Channel 650V 75A (Tc) 595W (Tc) Through Hole TO-247, SuperFET® III
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NTMFS5844NLT1G ON Semiconductor, N-Channel 60V 11.2A (Ta) 3.7W (Ta), 107W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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STP12N60M2 STMicroelectronics, N-Channel 600V 9A (Tc) 85W (Tc) Through Hole TO-220, MDmesh™ M2
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TSM024NA04LCR RLG Taiwan Semiconductor Corporation, N-Channel 40V 170A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),
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STD80N10F7 STMicroelectronics, N-Channel 100V 70A (Tc) 85W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VII
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SQM110N05-06L_GE3 Vishay Siliconix, N-Channel 55V 110A (Tc) 157W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®
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STL140N4F7AG STMicroelectronics, N-Channel 40V 120A (Tc) 111W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™
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RTR040N03TL Rohm Semiconductor, N-Channel 30V 4A (Ta) 1W (Ta) Surface Mount TSMT3,
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FDP054N10 ON Semiconductor, N-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220-3, PowerTrench®
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TK290P65Y,RQ Toshiba Semiconductor and Storage, N-Channel 650V 11.5A (Tc) 100W (Tc) Surface Mount DPAK, DTMOSV
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FDD16AN08A0 ON Semiconductor, N-Channel 75V 9A (Ta), 50A (Tc) 135W (Tc) Surface Mount DPAK, UltraFET™
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