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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB23N20DPbF, IRFS(L)23N20DPbF
Standard Package 800
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Nexperia USA Inc., N-Channel 100V 57A (Tj) 148W (Tc) Through Hole TO-220AB,
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STMicroelectronics, N-Channel 800V 250mA (Tc) 2.5W (Tc) Surface Mount SOT-223, SuperMESH™
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