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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB31N20DPbF, IRFS(L)31N20DPbF
Standard Package 800
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
STH260N6F6-2
STMicroelectronics, N-Channel 60V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VI
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CSD17510Q5A
Texas Instruments, N-Channel 30V 20A (Ta), 100A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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FQPF6N80C
ON Semiconductor, N-Channel 800V 5.5A (Tc) 51W (Tc) Through Hole TO-220F, QFET®
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SIHG33N60E-GE3
Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AC,
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SIHD14N60E-GE3
Vishay Siliconix, N-Channel 600V 13A (Tc) 147W (Tc) Surface Mount D-PAK (TO-252AA),
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TN2540N3-G
Microchip Technology, N-Channel 400V 175mA (Tj) 1W (Ta) Through Hole TO-92-3,
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PSMN5R4-25YLDX
Nexperia USA Inc., N-Channel 25V 70A (Tc) 47W (Tc) Surface Mount LFPAK56, Power-SO8,
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HTNFET-T
Honeywell Aerospace, N-Channel 55V 50W (Tj) Through Hole 4-Power Tab, HTMOS™
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RSQ015N06TR
Rohm Semiconductor, N-Channel 60V 1.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),
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IPN95R1K2P7ATMA1
Infineon Technologies, N-Channel 950V 6A (Tc) 7W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
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SIHW33N60E-GE3
Vishay Siliconix, N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AD,
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PSMN030-60YS,115
Nexperia USA Inc., N-Channel 60V 29A (Tc) 56W (Tc) Surface Mount LFPAK56, Power-SO8,
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