IRFU13N20DPBF

Part NumberIRFU13N20DPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRF(R,U)13N20DPbF
Standard Package	3000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	235mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 25V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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