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IRFU3410PBF

IRFU3410PBF

Part NumberIRFU3410PBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 31A I-PAK

DatasheetIRFR/IRFU3410PbF

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Through Hole IPAK (TO-251)

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IRFU3410PBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFR/IRFU3410PbF
Standard Package	3000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	39mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	56nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1690pF @ 25V
FET Feature	-
Power Dissipation (Max)	3W (Ta), 110W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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