IRFW630BTM-FP001

Part NumberIRFW630BTM-FP001

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 9A D2PAK

DatasheetIRFW630B

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 9A (Tc) 3.13W (Ta), 72W (Tc) Surface Mount D²PAK (TO-263AB)

To learn about the specification of IRFW630BTM-FP001, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRFW630BTM-FP001 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRFW630BTM-FP001.
We are offering IRFW630BTM-FP001 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRFW630BTM-FP001 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRFW630B

Standard Package

800

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Not For New Designs

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 25V

FET Feature

Power Dissipation (Max)

3.13W (Ta), 72W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

All categories