IRL100HS121
IRL100HS121
Part Number IRL100HS121 Description MOSFET N-CH 100V 6PQFN Package / Case 6-VDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 11A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2)
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IRL100HS121 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRL100HS121 Standard Package 1 Manufacturer Infineon Technologies Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 42mOhm @ 6.7A, 10V Vgs(th) (Max) @ Id 2.3V @ 10µA Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 440pF @ 50V FET Feature - Power Dissipation (Max) 11.5W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-PQFN (2x2) Package / Case 6-VDFN Exposed Pad
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