IRL60B216
IRL60B216
Part Number IRL60B216 Description MOSFET N-CH 60V 195A Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB
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IRL60B216 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRL60B216 Standard Package 1000 Manufacturer Infineon Technologies Series HEXFET®, StrongIRFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 258nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15570pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
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