IRLB8314PBF
IRLB8314PBF
Part Number IRLB8314PBF Description MOSFET N-CH 30V 184A TO220 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 130A (Tc) 125W (Tc) Through Hole TO-220-3
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IRLB8314PBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLB8314PbF Standard Package 1000 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.4mOhm @ 68A, 10V Vgs(th) (Max) @ Id 2.2V @ 100µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5050pF @ 15V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3
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