IRLB8314PBF
IRLB8314PBF
Part Number IRLB8314PBF
Description MOSFET N-CH 30V 184A TO220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 130A (Tc) 125W (Tc) Through Hole TO-220-3
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IRLB8314PBF - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLB8314PbF
Standard Package 1000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 68A, 10V
Vgs(th) (Max) @ Id 2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5050pF @ 15V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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