IRLML6401TRPBF

Part NumberIRLML6401TRPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLML6401PbF
Standard Package	1
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15nC @ 5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	830pF @ 10V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Micro3™/SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

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