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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR(U)120,%20SiHLR(U)120
Standard Package 2000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STD16NF06LT4
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TPH11006NL,LQ
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IPD22N08S2L50ATMA1
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IXYS, N-Channel 300V 90A (Tc) 560W (Tc) Through Hole PLUS247™-3, HiPerFET™
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RS1E350BNTB
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STD12N60M2
STMicroelectronics, N-Channel 600V 9A (Tc) 85W (Tc) Surface Mount DPAK, MDmesh™ M2
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TSM100N06CZ C0G
Taiwan Semiconductor Corporation, N-Channel 60V 100A (Tc) 167W (Tc) Through Hole TO-220,
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IRF7402TRPBF
Infineon Technologies, N-Channel 20V 6.8A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
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