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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR3110ZPbF, IRLU3110ZPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
FDP18N50
ON Semiconductor, N-Channel 500V 18A (Tc) 235W (Tc) Through Hole TO-220-3, UniFET™
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DMN3009SFGQ-7
Diodes Incorporated, N-Channel 30V 16A (Ta), 45A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8, Automotive, AEC-Q101
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SI7686DP-T1-E3
Vishay Siliconix, N-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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AOT430
Alpha & Omega Semiconductor Inc., N-Channel 75V 80A (Tc) 268W (Tc) Through Hole TO-220,
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SISS12DN-T1-GE3
Vishay Siliconix, N-Channel 40V 37.5A (Ta), 60A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV
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TK10P60W,RVQ
Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV
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SIHF12N60E-GE3
Vishay Siliconix, N-Channel 600V 12A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,
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IRLZ24PBF
Vishay Siliconix, N-Channel 60V 17A (Tc) 60W (Tc) Through Hole TO-220AB,
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CPH3457-TL-W
ON Semiconductor, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount 3-CPH,
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RJP020N06T100
Rohm Semiconductor, N-Channel 60V 2A (Ta) 500mW (Ta) Surface Mount MPT3,
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RD3L080SNFRATL
Rohm Semiconductor, N-Channel 60V 8A (Ta) 15W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
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STDV3055L104T4G
ON Semiconductor, N-Channel 60V 12A (Ta) 1.5W (Ta), 48W (Tj) Surface Mount DPAK,
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