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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRLR3110ZPbF, IRLU3110ZPbF
Standard Package 2000
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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STMicroelectronics, N-Channel 650V 17A (Tc) 125W (Tc) Through Hole TO-220AB, MDmesh™ V
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NTMFS5H409NLT1G
ON Semiconductor, N-Channel 40V 41A (Ta), 270A (Tc) 3.2W (Ta), 140W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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