IRLU3110ZPBF

Part NumberIRLU3110ZPBF

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRLR3110ZPbF, IRLU3110ZPbF
Standard Package	3000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	14mOhm @ 38A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 4.5V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 25V
FET Feature	-
Power Dissipation (Max)	140W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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IPC100N04S51R7ATMA1	Infineon Technologies, N-Channel 40V 100A (Tc) 115W (Tc) Surface Mount PG-TDSON-8-34, OptiMOS™	View
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