IRLW610ATM

Part NumberIRLW610ATM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 3.3A I2PAK

DatasheetIRLW, I610A

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 3.3A (Tc) 3.1W (Ta), 33W (Tc) Through Hole I2PAK (TO-262)

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IRLW610ATM - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRLW, I610A

Standard Package

800

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

3.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.65A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

240pF @ 25V

FET Feature

Power Dissipation (Max)

3.1W (Ta), 33W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

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