IRLW630ATM

Part NumberIRLW630ATM

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 200V 9A I2PAK

DatasheetIRLW/I630A

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 9A (Tc) 3.1W (Ta), 69W (Tc) Through Hole I2PAK (TO-262)

To learn about the specification of IRLW630ATM, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IRLW630ATM with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IRLW630ATM.
We are offering IRLW630ATM for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IRLW630ATM - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IRLW/I630A

Standard Package

800

Manufacturer

ON Semiconductor

Series

Packaging

Tape & Reel (TR)

Part Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

Rds On (Max) @ Id, Vgs

400mOhm @ 4.5A, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

755pF @ 25V

FET Feature

Power Dissipation (Max)

3.1W (Ta), 69W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK (TO-262)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

All categories