Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFB80N50Q2

IXFB80N50Q2

IXFB80N50Q2

Part NumberIXFB80N50Q2

ManufacturerIXYS

DescriptionMOSFET N-CH 500V 80A PLUS264

DatasheetIXFB80N50Q2

Package / CaseTO-264-3, TO-264AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 80A (Tc) 960W (Tc) Through Hole PLUS264™

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IXFB80N50Q2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFB80N50Q2
Standard Package	25
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	15000pF @ 25V
FET Feature	-
Power Dissipation (Max)	960W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA

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IXFB80N50Q2 - Tags

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