Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFH60N65X2

IXFH60N65X2

IXFH60N65X2

Part NumberIXFH60N65X2

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 60A TO-247

DatasheetIXFH60N65X2 Preliminary

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 60A (Tc) 780W (Tc) Through Hole

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IXFH60N65X2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFH60N65X2 Preliminary
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6180pF @ 25V
FET Feature	-
Power Dissipation (Max)	780W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3

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