IXFK320N17T2

Part NumberIXFK320N17T2

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXF(K,X)320N17T2
Standard Package	25
Manufacturer	IXYS
Series	GigaMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	170V
Current - Continuous Drain (Id) @ 25°C	320A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5.2mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	640nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	45000pF @ 25V
FET Feature	-
Power Dissipation (Max)	1670W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264AA (IXFK)
Package / Case	TO-264-3, TO-264AA

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