IXFR30N110P

Part NumberIXFR30N110P

ManufacturerIXYS

DescriptionMOSFET N-CH 1100V 16A ISOPLUS247

DatasheetIXFR30N110P

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1100V 16A (Tc) 320W (Tc) Through Hole ISOPLUS247™

To learn about the specification of IXFR30N110P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IXFR30N110P with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IXFR30N110P.
We are offering IXFR30N110P for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IXFR30N110P - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Datasheet

IXFR30N110P

Standard Package

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

Packaging

Tube

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1100V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

235nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 25V

FET Feature

Power Dissipation (Max)

320W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

All categories

IXFR30N110P

Part NumberIXFR30N110P

ManufacturerIXYS

DescriptionMOSFET N-CH 1100V 16A ISOPLUS247

DatasheetIXFR30N110P

Package / CaseISOPLUS247™

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1100V 16A (Tc) 320W (Tc) Through Hole ISOPLUS247™

IXFR30N110P - Product Attributes

IXFR30N110P - Tags