Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFR32N100Q3

IXFR32N100Q3

IXFR32N100Q3

Part NumberIXFR32N100Q3

ManufacturerIXYS

DescriptionMOSFET N-CH 1000V 23A ISOPLUS247

DatasheetIXFR32N100Q3

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1000V 23A (Tc) 570W (Tc) Through Hole ISOPLUS247™

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IXFR32N100Q3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFR32N100Q3
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	350mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	9940pF @ 25V
FET Feature	-
Power Dissipation (Max)	570W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	TO-247-3

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IXFR32N100Q3 - Tags

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