Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXFX64N60Q3

IXFX64N60Q3

IXFX64N60Q3

Part NumberIXFX64N60Q3

ManufacturerIXYS

DescriptionMOSFET N-CH 600V 64A PLUS247

DatasheetIXFx64N60Q3

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 64A (Tc) 1250W (Tc) Through Hole PLUS247™-3

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IXFX64N60Q3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXFx64N60Q3
Standard Package	30
Manufacturer	IXYS
Series	HiPerFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	95mOhm @ 32A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	9930pF @ 25V
FET Feature	-
Power Dissipation (Max)	1250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3

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IXFX64N60Q3 - Tags

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