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IXTA1N200P3HV


IXTA1N200P3HV

Part NumberIXTA1N200P3HV

Manufacturer

Description

Datasheet

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IXTA1N200P3HV - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package50
ManufacturerIXYS
Series-
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2000V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds646pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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