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IXTP1R6N50D2

IXTP1R6N50D2

Part NumberIXTP1R6N50D2

ManufacturerIXYS

DescriptionMOSFET N-CH 500V 1.6A TO220AB

DatasheetIXT(Y,A,P)1R6N50D2

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220AB

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IXTP1R6N50D2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXT(Y,A,P)1R6N50D2
Standard Package	50
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	2.3Ohm @ 800mA, 0V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	23.7nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	645pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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