Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IXTX102N65X2

IXTX102N65X2

IXTX102N65X2

Part NumberIXTX102N65X2

ManufacturerIXYS

DescriptionMOSFET N-CH 650V 102A X2 PLUS247

DatasheetIXTK102N65X2, IXTX102N65X2

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 650V 102A (Tc) 1040W (Tc) Through Hole PLUS247™-3

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IXTX102N65X2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IXTK102N65X2, IXTX102N65X2
Standard Package	30
Manufacturer	IXYS
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	30mOhm @ 51A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	152nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	10900pF @ 25V
FET Feature	-
Power Dissipation (Max)	1040W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3

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IXTX102N65X2 - Tags

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